Fast and slow-state traps at the MOSFET oxide interface with a temperature dependent C-V method. (pp. 1-6)  

Jean-Yves Rosaye, Pierre Mialhe, Jean-Pierre Charles, Yukihiko Watanabe and Yukio Yasuda

KEYWORDS: MOSFET transistor, C-V characteristics, hysteresis, defects, slow-state and fast state traps, TDCV.

 DEGRADATION OF A LIGHT EMITTING SILICON JUNCTION OF A BIPOLAR TRANSISTOR (pp. 7-9)

 N. Toufik, F. Pélanchon and P. Mialhe

Keywords: Silicon, Bipolar transistor, Ageing, Junction parameters, Light emission.